User Tools

Site Tools


category:vlsi_memos

Differences

This shows you the differences between two versions of the page.

Link to this comparison view

Both sides previous revisionPrevious revision
Next revision
Previous revision
category:vlsi_memos [2025/12/28 03:03] lcdnightmarescategory:vlsi_memos [2025/12/28 08:41] (current) lcdnightmares
Line 1: Line 1:
-===== The VLSI Memos =====+====== The VLSI Memos =====
 Over the course of 7 years, the Microsystems Research Center of MIT undertook a series of advanced research inquiries in early Very Large Scale Integrated-circuit (VLSI) technology. Publicized as 428 unique papers documenting their research in three distinct phases, fifteen MIT faculty worked tirelessly to achieve this relatively obscure body of work which culminated in the design and fabrication of [[category:hardware|two unique chips]]. A detailed summary can be found by reading the final report [[category:vlsi_memos:a_coherent_vlsi_design_environment|"A Coherent VLSI Design Environment"]]. Over the course of 7 years, the Microsystems Research Center of MIT undertook a series of advanced research inquiries in early Very Large Scale Integrated-circuit (VLSI) technology. Publicized as 428 unique papers documenting their research in three distinct phases, fifteen MIT faculty worked tirelessly to achieve this relatively obscure body of work which culminated in the design and fabrication of [[category:hardware|two unique chips]]. A detailed summary can be found by reading the final report [[category:vlsi_memos:a_coherent_vlsi_design_environment|"A Coherent VLSI Design Environment"]].
  
 Currently only a small number of these papers have been excavated from the MIT Archives with the studious help of the staff there. There presently remains the challenge of correctly converting RCA titles into their correct form. Currently only a small number of these papers have been excavated from the MIT Archives with the studious help of the staff there. There presently remains the challenge of correctly converting RCA titles into their correct form.
 +===== Timeline =====
 ==== Background ==== ==== Background ====
 The initial proposal made by [[category:people:professor_paul_penfield_jr|Professor Paul Penfield]] was made on January 4th, 1980 and is the first memo [[category:vlsi_memos:80-1|"Integrated Circuit Series" 80-1]]. The initial proposal made by [[category:people:professor_paul_penfield_jr|Professor Paul Penfield]] was made on January 4th, 1980 and is the first memo [[category:vlsi_memos:80-1|"Integrated Circuit Series" 80-1]].
Line 14: Line 15:
 [[category:vlsi_memos:80-1|80-1 "Integrated Circuit Series,"]] [[category:people:professor_paul_penfield_jr|Paul Penfield, Jr.]], January 1980. (4 pp.)\\     [[category:vlsi_memos:80-1|80-1 "Integrated Circuit Series,"]] [[category:people:professor_paul_penfield_jr|Paul Penfield, Jr.]], January 1980. (4 pp.)\\    
 [[category:vlsi_memos:80-2|80-2 "Using APL on the Speech System 20,"]] [[category:people:professor_paul_penfield_jr|Paul Penfield, Jr.]], January 1980. (7 pp.)\\  [[category:vlsi_memos:80-2|80-2 "Using APL on the Speech System 20,"]] [[category:people:professor_paul_penfield_jr|Paul Penfield, Jr.]], January 1980. (7 pp.)\\ 
-[[category:vlsi_memos:80-3|80-3 "Design Considerations for a Partial Differential Equation Machine,"]] Arvind and [[category:people:randal_e_bryant|Randal E. Bryant]], January 1980. (10 pp.)\\ +[[category:vlsi_memos:80-3|80-3 "Design Considerations for a Partial Differential Equation Machine,"]] [[category:people:arvind|Arvind]] and [[category:people:randal_e_bryant|Randal E. Bryant]], January 1980. (10 pp.)\\ 
 [[category:vlsi_memos:80-4|80-4 "Information Transfer and Area-Time Tradeoffs for VLSI Multiplication,"]] [[category:people:harold_abelson|Harold Abelson]] and [[category:people:peter_andreae|Peter Andreae]], January 1980. (9 pp.)\\  [[category:vlsi_memos:80-4|80-4 "Information Transfer and Area-Time Tradeoffs for VLSI Multiplication,"]] [[category:people:harold_abelson|Harold Abelson]] and [[category:people:peter_andreae|Peter Andreae]], January 1980. (9 pp.)\\ 
 [[category:vlsi_memos:80-4|80-5 "A Monolithic Moisture Sensor,"]] [[category:people:kou_togashi|Kou Togashi]] and [[category:people:stephen_d_senturia|Stephen D. Senturia]], January 1980. (9 pp.)\\  [[category:vlsi_memos:80-4|80-5 "A Monolithic Moisture Sensor,"]] [[category:people:kou_togashi|Kou Togashi]] and [[category:people:stephen_d_senturia|Stephen D. Senturia]], January 1980. (9 pp.)\\ 
Line 80: Line 81:
 [[category:vlsi_memos:81-59|81-59 "A Low Temperature Process to Increase the Grain Size in Polysilicon Films,"]] [[category:people:rafael_reif|Rafael Reif]] and [[category:people:johnathan_e_knott|Jonathan E. Knott]], August 1981. (12 pp.)\\  [[category:vlsi_memos:81-59|81-59 "A Low Temperature Process to Increase the Grain Size in Polysilicon Films,"]] [[category:people:rafael_reif|Rafael Reif]] and [[category:people:johnathan_e_knott|Jonathan E. Knott]], August 1981. (12 pp.)\\ 
 [[category:vlsi_memos:81-60|81-60 "A Low Temperature Process to Produce Large-Grain Uniformly-Oriented Polycrystalline Silicon Films on Amorphous Substrates,"]] [[category:people:johnathan_e_knott|Jonathan E. Knott]], August 1981 (50 pp.)\\ [[category:vlsi_memos:81-60|81-60 "A Low Temperature Process to Produce Large-Grain Uniformly-Oriented Polycrystalline Silicon Films on Amorphous Substrates,"]] [[category:people:johnathan_e_knott|Jonathan E. Knott]], August 1981 (50 pp.)\\
- +[[category:vlsi_memos:81-61|81-61 "HISDL - A Structure Description Language,"]] [[category:people:willie_yp_lim|Willie Y-P. Lim]], September 1981. (16 pp.)\\  
-== end properly formatted titles ==  +[[category:vlsi_memos:81-62|81-62 "The Syntactic Analysis of VLSI Systems Using Graphs,"]] [[category:people:lance_a_glasser|Lance A. Glasser]], September 1981. (5 pp.)\\  
-[[category:vlsi_memos:81-61|81-61 "HISDL - A Structure Description Language," Willie Y-P. Lim, September 1981. (16 pp.) +[[category:vlsi_memos:81-63|81-63 "Clocking Semi-Groups for VLSI Circuit Analysis,"]] [[category:people:lance_a_glasser|Lance A. Glasser]], September 1981. (4 pp.)\\  
-[[category:vlsi_memos:81-62|81-62 "The Syntactic Analysis of VLSI Systems Using Graphs," Lance A. Glasser, September 1981. (5 pp.) +[[category:vlsi_memos:81-64|81-64 "Vertical Single-Gate CMOS Inverters on Laser-Processed Multilayer Substrates,"]] G. T. Goeloe, E. Maby, D. J. Silversmith, R. W. Mountain, and [[category:people:dimitri_a_antoniadis|D. A. Antoniadis]], September 1981. (3 pp.)\\  
-[[category:vlsi_memos:81-63|81-63 "Clocking Semi-Groups for VLSI Circuit Analysis," Lance A. Glasser, September 1981. (4 pp.) +[[category:vlsi_memos:81-65|81-65 "An Introduction to DPL,"]] [[category:people:john_batali|John Batali]], October 1981. (24 pp.)\\  
-[[category:vlsi_memos:81-64|81-64 "Vertical Single-Gate CMOS Inverters on Laser-Processed Multilayer Substrates," G. T. Goeloe, E. Maby, D. J. Silversmith, R. W. Mountain, and D. A. Antoniadis, September 1981. (3 pp.) +[[category:vlsi_memos:81-66|81-66 "Optimal Placement for River Routing,"]] [[category:people:charles_e_leiserson|Charles E. Leiserson]] and [[category:people:ron_y_pinter|Ron Y. Pinter]], October 1981. (16 pp.)\\  
-[[category:vlsi_memos:81-65|81-65 "An Introduction to DPL," John Batali, October 1981. (24 pp.) +[[category:vlsi_memos:81-67|81-67 "Oxidation Induced Point Defects in Silicon,"]] [[category:people:dimitri_a_antoniadis|Dimitri A. Antoniadis]], October 1981. (24 pp.)\\  
-[[category:vlsi_memos:81-66|81-66 "Optimal Placement for River Routing," Charles E. Leiserson and Ron Y. Pinter, October 1981. (16 pp.) +[[category:vlsi_memos:81-68|81-68 "Use of Process and 2-D MOS Simulation in the Study of Doping Profile Influence on S/D Resistance in Short Channel MOSFET's,"]] P. Antognetti, C. Lombardi, and [[category:people:dimitri_a_antoniadis|D. Antoniadis]], October 1981. (4 pp.)\\  
-[[category:vlsi_memos:81-67|81-67 "Oxidation Induced Point Defects in Silicon," Dimitri A. Antoniadis, October 1981. (24 pp.) +[[category:vlsi_memos:81-69|81-69 "Transmission Diffraction Gratings for Soft X-Ray Spectroscopy and Spatial Period Division,"]] [[category:people:andrew_michael_hawryluk|Andrew Michael Hawryluk]], October 1981. (182 pp.)\\  
-[[category:vlsi_memos:81-68|81-68 "Use of Process and 2-D MOS Simulation in the Study of Doping Profile Influence on S/D Resistance in Short Channel MOSFET's," P. Antognetti, C. Lombardi, and D. Antoniadis, October 1981. (4 pp.) +[[category:vlsi_memos:81-70|81-70 "Dynamics of Oxygen Incorporation During Czochralski Silicon Growth,"]] [[category:people:david_francis_bliss|David Francis Bliss]], November 1981. (69 pp.)
-[[category:vlsi_memos:81-69|81-69 "Transmission Diffraction Gratings for Soft X-Ray Spectroscopy and Spatial Period Division,Andrew Michael Hawryluk, October 1981. (182 pp.) +
-[[category:vlsi_memos:81-70|81-70 "Dynamics of Oxygen Incorporation During Czochralski Silicon Growth," David Francis Bliss, November 1981. (69 pp.)+
  
 ==== Theory and Practice for Large-Scale Systems ==== ==== Theory and Practice for Large-Scale Systems ====
  
 ==== A Coherent VLSI Design Environment ==== ==== A Coherent VLSI Design Environment ====
 +
 +===== References =====
category/vlsi_memos.1766891009.txt.gz · Last modified: by lcdnightmares